IRLR3105TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Power Dissipation-Max :

57W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Avalanche Energy Rating (Eas) :

61 mJ

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Fall Time (Typ) :

37 ns

Published :

2010

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

25 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

55V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Continuous Drain Current (ID) :

25A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Number of Pins :

3

Number of Elements :

1

Rise Time :

57ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

57W

Turn On Delay Time :

8 ns

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Width :

6.22mm

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Case Connection :

DRAIN

Height :

2.38mm

Peak Reflow Temperature (Cel) :

260

Length :

6.7056mm

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

37m Ω @ 15A, 10V

Gate to Source Voltage (Vgs) :

16V