IRLR3103TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

REACH SVHC :

No SVHC

Voltage - Rated DC :

30V

Height :

2.3876mm

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

20A

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

54 ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Turn On Delay Time :

9 ns

RoHS Status :

ROHS3 Compliant

Published :

1998

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

16V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

19m Ω @ 33A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Series :

HEXFET®

Mounting Type :

Surface Mount

Power Dissipation-Max :

107W Tc

Drain to Source Breakdown Voltage :

30V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Width :

6.22mm

Vgs (Max) :

±16V

Resistance :

19mOhm

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

240 mJ

Radiation Hardening :

No

ECCN Code :

EAR99

Current Rating :

52A

Threshold Voltage :

1V

Pulsed Drain Current-Max (IDM) :

220A

Length :

6.7056mm

JEDEC-95 Code :

TO-252AA

Rise Time :

210ns

Power Dissipation :

69W

Turn-Off Delay Time :

20 ns

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Element Configuration :

Single

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

46A