IRLR3103PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Drain Current-Max (Abs) (ID) :

20A

Turn On Delay Time :

9 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

107W Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Continuous Drain Current (ID) :

55A

Height :

2.3876mm

Avalanche Energy Rating (Eas) :

240 mJ

Turn-Off Delay Time :

20 ns

Rise Time :

210ns

Transistor Application :

SWITCHING

Published :

1998

Lead Free :

Lead Free

FET Type :

N-Channel

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

19m Ω @ 33A, 10V

Current Rating :

55A

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Recovery Time :

78 ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Resistance :

19mOhm

Length :

6.7056mm

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

69W

Mounting Type :

Surface Mount

Width :

6.22mm

Number of Pins :

3

Number of Terminations :

2

Element Configuration :

Single

Number of Elements :

1

Voltage - Rated DC :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

220A

Vgs (Max) :

±16V

Fall Time (Typ) :

54 ns

Gate to Source Voltage (Vgs) :

16V

Terminal Form :

Gull wing

Nominal Vgs :

1 V