IRLR2908TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.7056mm

Continuous Drain Current (ID) :

30A

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

28m Ω @ 23A, 10V

Gate to Source Voltage (Vgs) :

16V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

250 mJ

Height :

2.52mm

Turn On Delay Time :

12 ns

Mount :

Surface Mount

Terminal Form :

Gull wing

Voltage - Rated DC :

80V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

175°C

Nominal Vgs :

1 V

Rise Time :

95ns

Radiation Hardening :

No

Published :

2010

Power Dissipation-Max :

120W Tc

Number of Pins :

3

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Resistance :

28mOhm

Number of Terminations :

2

ECCN Code :

EAR99

Fall Time (Typ) :

55 ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Current Rating :

30A

Number of Channels :

1

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 25V

Series :

HEXFET®

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Width :

6.22mm

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

80V

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Power Dissipation :

120W

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn-Off Delay Time :

36 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Breakdown Voltage :

80V

Element Configuration :

Single