IRLR2908PBF
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- Mfr.Part #
- IRLR2908PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 30A DPAK
- Stock
- 16,788
- In Stock ：
- 16,788
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2010
- Drain to Source Voltage (Vdss) :
- 80V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±16V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 120W Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Series :
- HEXFET®
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1890pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 39 Weeks
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 23A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRLR2908PBF
N-Channel Tube 28m Ω @ 23A, 10V ±16V 1890pF @ 25V 33nC @ 4.5V 80V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR2908PBF Description
IRLR2908PBF is an 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package. The IRLR2908PBF Power MOSFET is designed using the latest processing techniques in order to achieve extremely low on-resistance per silicon area. Additionally, this HEXFET power MOSFET is characterized by a junction operating temperature of 175°C, a low R*JC, a fast switching speed, and improved repeated avalanche resistance. With these features combined, this design can be used in a wide range of applications due to its efficiency and reliability.
IRLR2908PBF Features
-
Logic Level
-
RoHS Compliant
-
Industry-leading quality
-
Dynamic dv/dt Rating
-
Fast Switching
-
Fully Avalanche Rated
-
175°C Operating Temperature
IRLR2908PBF Applications
-
Commercial and Industrial Applications
-
Fast Switching
-
Amplification Purpose
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