IRLR2905ZTRPBF

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Mfr.Part #
IRLR2905ZTRPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 55V 42A DPAK
Stock
267,149
In Stock :
267,149

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Published :
2010
Voltage - Rated DC :
55V
Drain Current-Max (Abs) (ID) :
42A
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
30
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free :
Contains Lead, Lead Free
Transistor Element Material :
SILICON
Height :
2.2606mm
Fall Time (Typ) :
33 ns
Current Rating :
60A
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Rise Time :
130ns
Pulsed Drain Current-Max (IDM) :
240A
Avalanche Energy Rating (Eas) :
85 mJ
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 5V
Radiation Hardening :
No
JESD-609 Code :
e3
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
16V
Drain to Source Breakdown Voltage :
55V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Threshold Voltage :
3V
Number of Terminations :
2
FET Type :
N-Channel
Dual Supply Voltage :
55V
Termination :
SMD/SMT
Number of Pins :
3
Length :
6.7056mm
Continuous Drain Current (ID) :
42mA
Vgs (Max) :
±16V
Number of Elements :
1
JEDEC-95 Code :
TO-252AA
Input Capacitance (Ciss) (Max) @ Vds :
1570pF @ 25V
Turn On Delay Time :
14 ns
Width :
6.22mm
Vgs(th) (Max) @ Id :
3V @ 250µA
Mounting Type :
Surface Mount
Element Configuration :
Single
Series :
HEXFET®
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Recovery Time :
33 ns
Rds On (Max) @ Id, Vgs :
13.5m Ω @ 36A, 10V
Packaging :
Tape and Reel (TR)
Factory Lead Time :
12 Weeks
Terminal Form :
Gull wing
Turn-Off Delay Time :
24 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
110W Tc
REACH SVHC :
No SVHC
JESD-30 Code :
R-PSSO-G2
Nominal Vgs :
3 V
Mount :
Surface Mount
Power Dissipation :
110W
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Operating Temperature :
-55°C~175°C TJ
Peak Reflow Temperature (Cel) :
260
Resistance :
13.5mOhm
Datasheets
IRLR2905ZTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRLR2905ZTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IRLR2905ZTRPBF pinout, IRLR2905ZTRPBF datasheet PDF, IRLR2905ZTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRLR2905ZTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRLR2905ZTRPBF


N-Channel Tape & Reel (TR) 13.5m Ω @ 36A, 10V ±16V 1570pF @ 25V 35nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR2905ZTRPBF Description


In order to achieve exceptionally low on-resistance per silicon area, this HEXFET? Power MOSFET makes use of the most recent processing methods. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.



IRLR2905ZTRPBF Features


  • Logic Grade

  • Contemporary Process Technology

  • Very Little On-Resistance

  • Operating Temperature: 175 °C

  • Switching quickly

  • Recurrent Avalanche Permitted to Tjmax



IRLR2905ZTRPBF Applications


Switching applications


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