IRLR2905Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Terminal Finish :

Tin/Lead (Sn/Pb)

Series :

HEXFET®

DS Breakdown Voltage-Min :

55V

Power Dissipation-Max :

110W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

JESD-609 Code :

e0

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

42A

Packaging :

Tube

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 36A, 10V

Terminal Position :

Single

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±16V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain-source On Resistance-Max :

0.0135Ohm

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Peak Reflow Temperature (Cel) :

245

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

240A

Drain to Source Voltage (Vdss) :

55V

Surface Mount :

yes

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

85 mJ

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE