IRLR2905TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

175°C

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Transistor Application :

SWITCHING

Radiation Hardening :

No

Fall Time (Typ) :

15 ns

Series :

HEXFET®

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Lead Free :

Contains Lead, Lead Free

Number of Terminations :

2

Power Dissipation-Max :

110W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Element Configuration :

Single

Published :

2000

Continuous Drain Current (ID) :

42A

Nominal Vgs :

2 V

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

26 ns

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Power Dissipation :

69W

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.52mm

Length :

6.7056mm

Contact Plating :

Tin

Rise Time :

84ns

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2V

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Resistance :

27mOhm

Termination :

SMD/SMT

Width :

6.22mm

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Breakdown Voltage :

55V

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Drain Current-Max (Abs) (ID) :

20A

Additional Feature :

AVALANCHE RATED

Number of Channels :

1

Vgs (Max) :

±16V

Voltage - Rated DC :

55V

Current Rating :

41A

Recovery Time :

120 ns