IRLR2905PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.03Ohm

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

20A

Power Dissipation-Max :

110W Tc

Drain to Source Voltage (Vdss) :

55V

Published :

2000

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

160A

Avalanche Energy Rating (Eas) :

210 mJ

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Transistor Element Material :

SILICON

Number of Terminations :

2

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Packaging :

Tube

Case Connection :

DRAIN

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED