IRLR2905PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.03Ohm

Operating Temperature :

-55°C~175°C TJ

Published :

2000

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

DS Breakdown Voltage-Min :

55V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

55V

Pulsed Drain Current-Max (IDM) :

160A

Drain Current-Max (Abs) (ID) :

20A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Packaging :

Tube

Number of Terminations :

2

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

210 mJ

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation-Max :

110W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN