IRLR2705TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

46W

Gate to Source Voltage (Vgs) :

16V

Turn On Delay Time :

8.9 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

REACH SVHC :

No SVHC

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±16V

Fall Time (Typ) :

29 ns

JESD-609 Code :

e3

Published :

2005

Power Dissipation-Max :

68W Tc

Resistance :

40mOhm

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Element Configuration :

Single

Contact Plating :

Tin

Turn-Off Delay Time :

21 ns

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

40m Ω @ 17A, 10V

Number of Elements :

1

Width :

6.22mm

Transistor Element Material :

SILICON

Series :

HEXFET®

Height :

2.3876mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Mounting Type :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Number of Pins :

3

FET Type :

N-Channel

Number of Terminations :

2

Drain to Source Breakdown Voltage :

55V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Voltage - Rated DC :

55V

Dual Supply Voltage :

55V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

28A

Radiation Hardening :

No

Rise Time :

100ns

Nominal Vgs :

2 V

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2V

Terminal Form :

Gull wing

Length :

6.7056mm

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Recovery Time :

110 ns

ECCN Code :

EAR99

Current Rating :

24A