IRLR2705TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

110A

Power Dissipation-Max :

68W Tc

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.051Ohm

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Published :

2003

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

ECCN Code :

EAR99

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Surface Mount :

yes

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

110 mJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±16V

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

28A

Number of Terminations :

2

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

40m Ω @ 17A, 10V