IRLR2705PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

28A

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

DS Breakdown Voltage-Min :

55V

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Factory Lead Time :

20 Weeks

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Rds On (Max) @ Id, Vgs :

40m Ω @ 17A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Terminal Position :

Single

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Power Dissipation-Max :

68W Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

55V

Avalanche Energy Rating (Eas) :

110 mJ

Pulsed Drain Current-Max (IDM) :

110A

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.051Ohm

Terminal Form :

Gull wing

Number of Elements :

1