IRLR2703TRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.045Ohm

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Terminal Position :

Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Form :

Gull wing

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

20A

Number of Terminations :

2

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

96A

Published :

2003

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Power Dissipation-Max :

45W Tc

DS Breakdown Voltage-Min :

30V

Terminal Finish :

MATTE TIN OVER NICKEL

Vgs (Max) :

±16V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

45m Ω @ 14A, 10V

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

200 mJ

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3