IRLR2703TRLPBF
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- Mfr.Part #
- IRLR2703TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 23A DPAK
- Stock
- 39,495
- In Stock ：
- 39,495
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Rise Time :
- 140ns
- Power Dissipation-Max :
- 45W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 30V
- Drain to Source Voltage (Vdss) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Number of Pins :
- 3
- Max Operating Temperature :
- 175°C
- Threshold Voltage :
- 16V
- Input Capacitance :
- 450pF
- Lead Free :
- Lead Free
- Series :
- HEXFET®
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.22mm
- Supplier Device Package :
- D-Pak
- Fall Time (Typ) :
- 20 ns
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Number of Elements :
- 1
- Height :
- 2.3876mm
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Length :
- 6.7056mm
- Gate to Source Voltage (Vgs) :
- 16V
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 12 ns
- Power Dissipation :
- 38W
- Published :
- 2004
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Resistance :
- 45mOhm
- Continuous Drain Current (ID) :
- 23A
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 65mOhm
- Vgs (Max) :
- ±16V
- Rds On (Max) @ Id, Vgs :
- 45mOhm @ 14A, 10V
- Rds On Max :
- 45 mΩ
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 8.5 ns
- Nominal Vgs :
- 16 V
- Datasheets
- IRLR2703TRLPBF
N-Channel Tape & Reel (TR) 45mOhm @ 14A, 10V ±16V 450pF @ 25V 15nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR2703TRLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 450pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 12 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 65mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 16V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
IRLR2703TRLPBF Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 65mOhm
a threshold voltage of 16V
a 30V drain to source voltage (Vdss)
IRLR2703TRLPBF Applications
There are a lot of Infineon Technologies
IRLR2703TRLPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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