IRLR130ATM
- Mfr.Part #
- IRLR130ATM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 13A DPAK
- Stock
- 20,775
- In Stock :
- 20,775
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.12Ohm
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 13A
- Pulsed Drain Current-Max (IDM) :
- 45A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Avalanche Energy Rating (Eas) :
- 225 mJ
- DS Breakdown Voltage-Min :
- 100V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 755pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 100V
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 6.5A, 5V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Power Dissipation-Max :
- 2.5W Ta 46W Tc
- Terminal Form :
- Gull wing
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- Datasheets
- IRLR130ATM

N-Channel Tape & Reel (TR) 120m Ω @ 6.5A, 5V ±20V 755pF @ 25V 24nC @ 5V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR130ATM Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 225 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 755pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 13A.Peak drain current is 45A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
IRLR130ATM Features
the avalanche energy rating (Eas) is 225 mJ
based on its rated peak drain current 45A.
a 100V drain to source voltage (Vdss)
IRLR130ATM Applications
There are a lot of Rochester Electronics, LLC
IRLR130ATM applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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