IRLR120TRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Width :

6.22mm

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Number of Channels :

1

Number of Elements :

1

Rise Time :

64ns

ECCN Code :

EAR99

Mount :

Surface Mount

Fall Time (Typ) :

27 ns

Element Configuration :

Single

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Published :

2012

Length :

6.73mm

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

7.7A Tc

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.27Ohm

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±10V

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Transistor Element Material :

SILICON

Turn-Off Delay Time :

21 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

7.7A

Height :

2.39mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

2.5W Ta 42W Tc

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Rds On (Max) @ Id, Vgs :

270m Ω @ 4.6A, 5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Mounting Type :

Surface Mount

Turn On Delay Time :

9.8 ns

Weight :

1.437803g

Number of Pins :

3

Gate to Source Voltage (Vgs) :

10V