IRLR120TRL
- Mfr.Part #
- IRLR120TRL
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.7A DPAK
- Stock
- 17,562
- In Stock :
- 17,562
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Peak Reflow Temperature (Cel) :
- 240
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Published :
- 2016
- Continuous Drain Current (ID) :
- 7.7A
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Turn On Delay Time :
- 9.8 ns
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 10V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Rise Time :
- 64ns
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±10V
- Drain-source On Resistance-Max :
- 0.27Ohm
- Turn-Off Delay Time :
- 21 ns
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Breakdown Voltage :
- 100V
- Fall Time (Typ) :
- 27 ns
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.29.00.95
- Factory Lead Time :
- 13 Weeks
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 4.6A, 5V
- Datasheets
- IRLR120TRL
N-Channel Tape & Reel (TR) 270m Ω @ 4.6A, 5V ±10V 490pF @ 25V 12nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR120TRL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 210 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 490pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.
IRLR120TRL Features
the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
IRLR120TRL Applications
There are a lot of Vishay Siliconix
IRLR120TRL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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