IRLR120NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

185m Ω @ 6A, 10V

Continuous Drain Current (ID) :

10A

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

Fall Time (Typ) :

22 ns

FET Type :

N-Channel

Vgs (Max) :

±16V

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

TO-252AA

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Threshold Voltage :

2V

Current Rating :

11A

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Nominal Vgs :

2 V

ECCN Code :

EAR99

Width :

6.22mm

Terminal Form :

Gull wing

Voltage - Rated DC :

100V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Element Configuration :

Single

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

48W

Termination :

SMD/SMT

Avalanche Energy Rating (Eas) :

85 mJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

175°C

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Length :

6.7056mm

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Mount :

Surface Mount

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

48W Tc

Peak Reflow Temperature (Cel) :

260

Published :

2004

Turn On Delay Time :

4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Recovery Time :

160 ns

Height :

2.52mm

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Rise Time :

35ns

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

JESD-609 Code :

e3

Resistance :

185mOhm