IRLR120NTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Published :

2004

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-252AA

Avalanche Energy Rating (Eas) :

85 mJ

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Series :

HEXFET®

Power Dissipation-Max :

48W Tc

Rds On (Max) @ Id, Vgs :

185m Ω @ 6A, 10V

FET Type :

N-Channel

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

35A

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

10A

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±16V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.225Ohm

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks