IRLR120ATF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

8.4A

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

94 mJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Vgs (Max) :

±20V

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

5V

Power Dissipation-Max :

2.5W Ta 35W Tc

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Pin Count :

3

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

29A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

220m Ω @ 4.2A, 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

8.4A Tc

Drain-source On Resistance-Max :

0.22Ohm

Pbfree Code :

yes

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2