IRLR120
- Mfr.Part #
- IRLR120
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.7A DPAK
- Stock
- 52,678
- In Stock :
- 52,678
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 27 ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 270mOhm
- Published :
- 2015
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 4.6A, 5V
- Rise Time :
- 64ns
- Rds On Max :
- 270 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Continuous Drain Current (ID) :
- 7.7A
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Packaging :
- Tube
- Vgs (Max) :
- ±10V
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Factory Lead Time :
- 13 Weeks
- Gate to Source Voltage (Vgs) :
- 10V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Drain to Source Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Input Capacitance :
- 490pF
- RoHS Status :
- Non-RoHS Compliant
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 9.8 ns
- Element Configuration :
- Single
- Supplier Device Package :
- D-Pak
- Turn-Off Delay Time :
- 21 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRLR120
N-Channel Tube 270mOhm @ 4.6A, 5V ±10V 490pF @ 25V 12nC @ 5V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR120 Overview
A device's maximal input capacitance is 490pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 270mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
IRLR120 Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRLR120 Applications
There are a lot of Vishay Siliconix
IRLR120 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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