IRLR110TRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Weight :

1.437803g

Power Dissipation-Max :

2.5W Ta 25W Tc

Continuous Drain Current (ID) :

4.3A

Drain-source On Resistance-Max :

0.54Ohm

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Fall Time (Typ) :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

Element Configuration :

Single

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

540m Ω @ 2.6A, 5V

Radiation Hardening :

No

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

11 Weeks

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Width :

6.22mm

Case Connection :

DRAIN

Number of Channels :

1

Drain to Source Voltage (Vdss) :

100V

Rise Time :

47ns

Turn-Off Delay Time :

16 ns

Length :

6.73mm

Published :

2014

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Turn On Delay Time :

9.3 ns

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

10V

Vgs (Max) :

±10V

Height :

2.39mm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Mounting Type :

Surface Mount

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2