IRLR110TR
- Mfr.Part #
- IRLR110TR
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.3A DPAK
- Stock
- 33,403
- In Stock :
- 33,403
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 17 ns
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 100V
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Supplier Device Package :
- D-Pak
- Published :
- 2016
- Turn On Delay Time :
- 9.3 ns
- Drain to Source Resistance :
- 540mOhm
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 2.6A, 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Rds On Max :
- 540 mΩ
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 49 Weeks
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 5V
- Input Capacitance :
- 250pF
- Drain to Source Voltage (Vdss) :
- 100V
- Continuous Drain Current (ID) :
- 4.3A
- Gate to Source Voltage (Vgs) :
- 10V
- Turn-Off Delay Time :
- 16 ns
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Vgs (Max) :
- ±10V
- Rise Time :
- 47ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Datasheets
- IRLR110TR
N-Channel Tape & Reel (TR) 540mOhm @ 2.6A, 5V ±10V 250pF @ 25V 6.1nC @ 5V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR110TR Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.3A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 540mOhm.A turn-on delay time of 9.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4V 5V).
IRLR110TR Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRLR110TR Applications
There are a lot of Vishay Siliconix
IRLR110TR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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