IRLR110
- Mfr.Part #
- IRLR110
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.3A DPAK
- Stock
- 13,293
- In Stock :
- 13,293
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 250pF
- Gate to Source Voltage (Vgs) :
- 10V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 540 mΩ
- Continuous Drain Current (ID) :
- 4.3A
- Turn On Delay Time :
- 9.3 ns
- Packaging :
- Tube
- Vgs (Max) :
- ±10V
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Resistance :
- 540mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 100V
- Supplier Device Package :
- D-Pak
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Fall Time (Typ) :
- 17 ns
- Factory Lead Time :
- 21 Weeks
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Number of Pins :
- 3
- Published :
- 2016
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 2.6A, 5V
- Rise Time :
- 47ns
- Turn-Off Delay Time :
- 16 ns
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 5V
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation :
- 2.5W
- Datasheets
- IRLR110
N-Channel Tube 540mOhm @ 2.6A, 5V ±10V 250pF @ 25V 6.1nC @ 5V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR110 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 250pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.3A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 16 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 540mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (4V 5V) reduces this device's overall power consumption.
IRLR110 Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRLR110 Applications
There are a lot of Vishay Siliconix
IRLR110 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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