IRLR024ZTRLPBF
- Mfr.Part #
- IRLR024ZTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 16A DPAK
- Stock
- 9,339
- In Stock :
- 9,339
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 8.2 ns
- Drain to Source Resistance :
- 58mOhm
- Length :
- 6.7056mm
- Series :
- HEXFET®
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 16A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Pins :
- 3
- Published :
- 2000
- Drain to Source Voltage (Vdss) :
- 55V
- Max Operating Temperature :
- 175°C
- Height :
- 2.26mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 25V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Rds On Max :
- 58 mΩ
- Supplier Device Package :
- D-Pak
- Power Dissipation :
- 35W
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±16V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 35W Tc
- Mount :
- Surface Mount
- Width :
- 6.22mm
- Drain to Source Breakdown Voltage :
- 55V
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 19 ns
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 16V
- Input Capacitance :
- 380pF
- Rds On (Max) @ Id, Vgs :
- 58mOhm @ 9.6A, 10V
- Rise Time :
- 43ns
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 16 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 9.9nC @ 5V
- Datasheets
- IRLR024ZTRLPBF

N-Channel Tape & Reel (TR) 58mOhm @ 9.6A, 10V ±16V 380pF @ 25V 9.9nC @ 5V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR024ZTRLPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 380pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.This device has a drain-to-source resistance of 58mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRLR024ZTRLPBF Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 58mOhm
a 55V drain to source voltage (Vdss)
IRLR024ZTRLPBF Applications
There are a lot of Infineon Technologies
IRLR024ZTRLPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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