IRLR024TR
- Mfr.Part #
- IRLR024TR
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 14A DPAK
- Stock
- 26,347
- In Stock :
- 26,347
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Vgs (Max) :
- ±10V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn On Delay Time :
- 11 ns
- Lead Free :
- Contains Lead
- Power Dissipation :
- 2.5W
- Gate to Source Voltage (Vgs) :
- 10V
- Voltage - Rated DC :
- 60V
- Rds On Max :
- 100 mΩ
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 8.4A, 5V
- Supplier Device Package :
- D-Pak
- Drain to Source Resistance :
- 100MOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Input Capacitance :
- 870pF
- Factory Lead Time :
- 21 Weeks
- Continuous Drain Current (ID) :
- 14A
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2016
- Turn-Off Delay Time :
- 23 ns
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Number of Pins :
- 2
- Current Rating :
- 14A
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 5V
- Rise Time :
- 110ns
- Fall Time (Typ) :
- 41 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRLR024TR
N-Channel Tape & Reel (TR) 100mOhm @ 8.4A, 5V ±10V 870pF @ 25V 18nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR024TR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 100mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLR024TR Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRLR024TR Applications
There are a lot of Vishay Siliconix
IRLR024TR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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