IRLR024NTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

Avalanche Energy Rating (Eas) :

68 mJ

Rds On (Max) @ Id, Vgs :

65m Ω @ 10A, 10V

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

JESD-609 Code :

e3

Published :

2000

Pulsed Drain Current-Max (IDM) :

72A

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Power Dissipation-Max :

45W Tc

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

17A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Case Connection :

DRAIN

Surface Mount :

yes

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.08Ohm

JEDEC-95 Code :

TO-252AA

Terminal Position :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

17A Tc