IRLR024NTRPBF

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Mfr.Part #
IRLR024NTRPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 55V 17A DPAK
Stock
450,853
In Stock :
450,853

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
68 mJ
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Additional Feature :
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Lead Free :
Contains Lead, Lead Free
Nominal Vgs :
2 V
Max Junction Temperature (Tj) :
175°C
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
REACH SVHC :
No SVHC
Threshold Voltage :
2V
Published :
2004
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Dual Supply Voltage :
55V
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 25V
FET Type :
N-Channel
Termination :
SMD/SMT
Packaging :
Tape and Reel (TR)
Power Dissipation :
45W
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
45W Tc
Resistance :
80mOhm
Pulsed Drain Current-Max (IDM) :
72A
Voltage - Rated DC :
55V
Turn-Off Delay Time :
20 ns
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 5V
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
16V
Vgs(th) (Max) @ Id :
2V @ 250μA
Number of Pins :
3
Current Rating :
17A
Case Connection :
DRAIN
Turn On Delay Time :
7.1 ns
JEDEC-95 Code :
TO-252AA
Continuous Drain Current (ID) :
17A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Width :
6.22mm
Contact Plating :
Tin
Height :
2.52mm
Rise Time :
74ns
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
65m Ω @ 10A, 10V
Operating Mode :
ENHANCEMENT MODE
Series :
HEXFET®
JESD-609 Code :
e3
Terminal Form :
Gull wing
Vgs (Max) :
±16V
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Length :
6.7056mm
Fall Time (Typ) :
29 ns
Time@Peak Reflow Temperature-Max (s) :
30
Drain to Source Breakdown Voltage :
55V
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Recovery Time :
90 ns
Number of Terminations :
2
Number of Elements :
1
JESD-30 Code :
R-PSSO-G2
Datasheets
IRLR024NTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRLR024NTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Channels:1, Number of Terminations:2, IRLR024NTRPBF pinout, IRLR024NTRPBF datasheet PDF, IRLR024NTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRLR024NTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRLR024NTRPBF


N-Channel Tape & Reel (TR) 65m Ω @ 10A, 10V ±16V 480pF @ 25V 15nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR024NTRPBF Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 68 mJ.The maximum input capacitance of this device is 480pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 72A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.1 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4V 10V), this device helps reduce its power consumption.

IRLR024NTRPBF Features


the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 72A.
a threshold voltage of 2V


IRLR024NTRPBF Applications


There are a lot of Infineon Technologies
IRLR024NTRPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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