IRLR024NTRPBF
- Mfr.Part #
- IRLR024NTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 17A DPAK
- Stock
- 450,853
- In Stock :
- 450,853
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 68 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Lead Free :
- Contains Lead, Lead Free
- Nominal Vgs :
- 2 V
- Max Junction Temperature (Tj) :
- 175°C
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 2V
- Published :
- 2004
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Dual Supply Voltage :
- 55V
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 25V
- FET Type :
- N-Channel
- Termination :
- SMD/SMT
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 45W
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 45W Tc
- Resistance :
- 80mOhm
- Pulsed Drain Current-Max (IDM) :
- 72A
- Voltage - Rated DC :
- 55V
- Turn-Off Delay Time :
- 20 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 16V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Pins :
- 3
- Current Rating :
- 17A
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 7.1 ns
- JEDEC-95 Code :
- TO-252AA
- Continuous Drain Current (ID) :
- 17A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.22mm
- Contact Plating :
- Tin
- Height :
- 2.52mm
- Rise Time :
- 74ns
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 10A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HEXFET®
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±16V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.7056mm
- Fall Time (Typ) :
- 29 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Breakdown Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Recovery Time :
- 90 ns
- Number of Terminations :
- 2
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- IRLR024NTRPBF

N-Channel Tape & Reel (TR) 65m Ω @ 10A, 10V ±16V 480pF @ 25V 15nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR024NTRPBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 68 mJ.The maximum input capacitance of this device is 480pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 72A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.1 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4V 10V), this device helps reduce its power consumption.
IRLR024NTRPBF Features
the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 72A.
a threshold voltage of 2V
IRLR024NTRPBF Applications
There are a lot of Infineon Technologies
IRLR024NTRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















