IRLR024NTRLPBF
- Mfr.Part #
- IRLR024NTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 17A DPAK
- Stock
- 489,026
- In Stock :
- 489,026
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Number of Elements :
- 1
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.08Ohm
- Avalanche Energy Rating (Eas) :
- 68 mJ
- Case Connection :
- DRAIN
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- HEXFET®
- Drain to Source Voltage (Vdss) :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- JEDEC-95 Code :
- TO-252AA
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 10A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Pulsed Drain Current-Max (IDM) :
- 72A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 45W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Drain Current-Max (Abs) (ID) :
- 17A
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 55V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Published :
- 2000
- Transistor Element Material :
- SILICON
- Datasheets
- IRLR024NTRLPBF

N-Channel Tape & Reel (TR) 65m Ω @ 10A, 10V ±16V 480pF @ 25V 15nC @ 5V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR024NTRLPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 68 mJ.A device's maximum input capacitance is 480pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 17A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 55V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
IRLR024NTRLPBF Features
the avalanche energy rating (Eas) is 68 mJ
based on its rated peak drain current 72A.
a 55V drain to source voltage (Vdss)
IRLR024NTRLPBF Applications
There are a lot of Infineon Technologies
IRLR024NTRLPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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