IRLIZ44NPBF
- Mfr.Part #
- IRLIZ44NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 30A TO220AB FP
- Stock
- 341
- In Stock :
- 341
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- Resistance :
- 25mOhm
- Nominal Vgs :
- 2 V
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 16V
- Recovery Time :
- 120 ns
- Threshold Voltage :
- 2V
- Drain to Source Breakdown Voltage :
- 55V
- Number of Pins :
- 3
- Published :
- 2004
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 28A
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 45W Tc
- Rise Time :
- 84ns
- Element Configuration :
- Single
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Width :
- 4.826mm
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 55V
- Case Connection :
- Isolated
- Lead Free :
- Contains Lead, Lead Free
- Mount :
- Through Hole
- Height :
- 9.8mm
- Length :
- 10.6172mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 5V
- Turn-Off Delay Time :
- 26 ns
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 11 ns
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Dual Supply Voltage :
- 55V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 14 Weeks
- Vgs (Max) :
- ±16V
- Continuous Drain Current (ID) :
- 30A
- Power Dissipation :
- 38W
- Fall Time (Typ) :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- FET Type :
- N-Channel
- Isolation Voltage :
- 2kV
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 17A, 10V
- Current Rating :
- 30A
- Datasheets
- IRLIZ44NPBF

N-Channel Tube 22m Ω @ 17A, 10V ±16V 1700pF @ 25V 48nC @ 5V TO-220-3 Full Pack
IRLIZ44NPBF Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRLIZ44NPBF Features
Logic –Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS ?
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
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