IRLI520NPBF

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Mfr.Part #
IRLI520NPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 100V 8.1A TO220AB FP
Stock
20,594
In Stock :
20,594

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
8.1A Tc
Turn-Off Delay Time :
23 ns
Power Dissipation :
27W
Power Dissipation-Max :
30W Tc
Package / Case :
TO-220-3 Full Pack
Series :
HEXFET®
Operating Temperature :
-55°C~175°C TJ
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Height :
9.8mm
Element Configuration :
Single
Resistance :
180mOhm
Case Connection :
Isolated
Drain to Source Breakdown Voltage :
100V
Avalanche Energy Rating (Eas) :
85 mJ
Rise Time :
35ns
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
180m Ω @ 6A, 10V
Published :
2004
JEDEC-95 Code :
TO-220AB
Nominal Vgs :
2 V
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
2V @ 250μA
Voltage - Rated DC :
100V
Width :
4.826mm
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 5V
Factory Lead Time :
14 Weeks
Threshold Voltage :
2V
Isolation Voltage :
2kV
Number of Elements :
1
FET Type :
N-Channel
Vgs (Max) :
±16V
Current Rating :
8.1A
Transistor Element Material :
SILICON
Fall Time (Typ) :
22 ns
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Dual Supply Voltage :
100V
Continuous Drain Current (ID) :
8.1A
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Gate to Source Voltage (Vgs) :
16V
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Turn On Delay Time :
40 ns
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.6172mm
Packaging :
Tube
Mount :
Through Hole
Datasheets
IRLI520NPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRLI520NPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IRLI520NPBF pinout, IRLI520NPBF datasheet PDF, IRLI520NPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRLI520NPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRLI520NPBF


N-Channel Tube 180m Ω @ 6A, 10V ±16V 440pF @ 25V 20nC @ 5V TO-220-3 Full Pack

IRLI520NPBF Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 85 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 440pF @ 25V.This device conducts a continuous drain current (ID) of 8.1A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).

IRLI520NPBF Features


the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 8.1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 23 ns
a threshold voltage of 2V


IRLI520NPBF Applications


There are a lot of Infineon Technologies
IRLI520NPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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