IRLI3803

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Number of Elements :

1

Case Connection :

Isolated

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

470A

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

No

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

6m Ω @ 40A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

DS Breakdown Voltage-Min :

30V

Number of Terminations :

3

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Package / Case :

TO-220-3 Full Pack

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

76A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Published :

1997

Avalanche Energy Rating (Eas) :

610 mJ

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

63W Tc

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.006Ohm

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

FET Type :

N-Channel