IRLI2910

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

26m Ω @ 16A, 10V

Power Dissipation-Max :

63W Tc

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Drain-source On Resistance-Max :

0.03Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

520 mJ

Drain to Source Voltage (Vdss) :

100V

Case Connection :

Isolated

Vgs (Max) :

±16V

Published :

1998

DS Breakdown Voltage-Min :

100V

Current - Continuous Drain (Id) @ 25°C :

31A Tc

JEDEC-95 Code :

TO-220AB

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

31A

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

190A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Position :

Single

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tube

Qualification Status :

Not Qualified

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Additional Feature :

AVALANCHE RATED