IRLI3803PBF
- Mfr.Part #
- IRLI3803PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 76A TO220AB FP
- Stock
- 15,639
- In Stock :
- 15,639
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Height :
- 16.12mm
- Mount :
- Through Hole
- Rds On Max :
- 6 mΩ
- Series :
- HEXFET®
- Power Dissipation :
- 48W
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Nominal Vgs :
- 1 V
- Published :
- 2004
- Supplier Device Package :
- TO-220AB Full-Pak
- Length :
- 10.6172mm
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- Voltage - Rated DC :
- 30V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 35 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Number of Pins :
- 3
- Resistance :
- 6mOhm
- Drain to Source Breakdown Voltage :
- 30V
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 40A, 10V
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 29 ns
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 5nF
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 63W Tc
- Current Rating :
- 67A
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 16V
- Drain to Source Resistance :
- 9mOhm
- Max Operating Temperature :
- 175°C
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 4.5V
- Width :
- 4.826mm
- Vgs (Max) :
- ±16V
- Package / Case :
- TO-220-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 76A
- Turn On Delay Time :
- 14 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 25V
- Rise Time :
- 230ns
- Datasheets
- IRLI3803PBF

N-Channel Tube 6mOhm @ 40A, 10V ±16V 5000pF @ 25V 140nC @ 4.5V 30V TO-220-3 Full Pack
IRLI3803PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 76A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 9mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRLI3803PBF Features
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 29 ns
single MOSFETs transistor is 9mOhm
a 30V drain to source voltage (Vdss)
IRLI3803PBF Applications
There are a lot of Infineon Technologies
IRLI3803PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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