IRLI2203N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N-Channel

Terminal Position :

Single

Surface Mount :

No

ECCN Code :

EAR99

Mounting Type :

Through Hole

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~175°C TJ

Configuration :

Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±16V

Drain-source On Resistance-Max :

0.007Ohm

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

61A

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Power Dissipation-Max :

47W Tc

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

7m Ω @ 37A, 10V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

61A Tc

JESD-609 Code :

e3