IRLIZ14G
- Mfr.Part #
- IRLIZ14G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 8A TO220-3
- Stock
- 15,036
- In Stock :
- 15,036
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 6.000006g
- Drain to Source Resistance :
- 200mOhm
- Rise Time :
- 110ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 8A
- Height :
- 9.8mm
- Gate to Source Voltage (Vgs) :
- 10V
- Supplier Device Package :
- TO-220-3
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Fall Time (Typ) :
- 26 ns
- Voltage - Rated DC :
- 60V
- Length :
- 10.63mm
- Current Rating :
- 8A
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 4.8A, 5V
- Turn On Delay Time :
- 9.3 ns
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Turn-Off Delay Time :
- 17 ns
- Packaging :
- Tube
- Max Operating Temperature :
- 175°C
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Rds On Max :
- 200 mΩ
- Width :
- 4.83mm
- Radiation Hardening :
- No
- Published :
- 2016
- Input Capacitance :
- 400pF
- Lead Free :
- Contains Lead
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation-Max :
- 27W Tc
- Number of Channels :
- 1
- Datasheets
- IRLIZ14G

N-Channel Tube 200mOhm @ 4.8A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-220-3 Full Pack, Isolated Tab
IRLIZ14G Overview
A device's maximal input capacitance is 400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 200mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
IRLIZ14G Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRLIZ14G Applications
There are a lot of Vishay Siliconix
IRLIZ14G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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