IRLIB9343PBF
- Mfr.Part #
- IRLIB9343PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 14A TO220AB FP
- Stock
- 8,945
- In Stock :
- 8,945
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -40°C~175°C TJ
- FET Type :
- P-Channel
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Resistance :
- 93mOhm
- Published :
- 2004
- Threshold Voltage :
- -1V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Fall Time (Typ) :
- 9.5 ns
- Element Configuration :
- Single
- Power Dissipation-Max :
- 33W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 50V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 33W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Nominal Vgs :
- -1 V
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 3.4A, 10V
- Voltage - Rated DC :
- -55V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 14 Weeks
- Case Connection :
- Isolated
- Rise Time :
- 24ns
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 55V
- Drain to Source Breakdown Voltage :
- -55V
- Additional Feature :
- High Reliability
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Current Rating :
- -14A
- Turn On Delay Time :
- 9.5 ns
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 21 ns
- Packaging :
- Tube
- Length :
- 10.6172mm
- Height :
- 9.8mm
- Width :
- 4.826mm
- Dual Supply Voltage :
- -55V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- -14A
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Datasheets
- IRLIB9343PBF

P-Channel Tube 105m Ω @ 3.4A, 10V ±20V 660pF @ 50V 47nC @ 10V 55V TO-220-3 Full Pack
IRLIB9343PBF Description
This Digital Audio HEXFET? is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 °C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
IRLIB9343PBF Features
-
Advanced Process Technology
-
Key Parameters Optimized for Class-D Audio Amplifier Applications
-
Low RDSON for Improved Efficiency
-
Low QG and Qsw for Better THD and Improved Efficiency
-
Low Qrr for Better THD and Lower EMI
-
175 °C Operating Junction Temperature for Ruggedness
-
Repetitive Avalanche Capability for Robustness and Reliability
-
Lead-Free
IRLIB9343PBF Applications
-
Switching Application
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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