IRLIB9343PBF

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Mfr.Part #
IRLIB9343PBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET P-CH 55V 14A TO220AB FP
Stock
8,945
In Stock :
8,945

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
ECCN Code :
EAR99
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-40°C~175°C TJ
FET Type :
P-Channel
Mount :
Through Hole
Vgs(th) (Max) @ Id :
1V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HEXFET®
Resistance :
93mOhm
Published :
2004
Threshold Voltage :
-1V
Pulsed Drain Current-Max (IDM) :
60A
Fall Time (Typ) :
9.5 ns
Element Configuration :
Single
Power Dissipation-Max :
33W Tc
Input Capacitance (Ciss) (Max) @ Vds :
660pF @ 50V
Transistor Application :
SWITCHING
Power Dissipation :
33W
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Nominal Vgs :
-1 V
Rds On (Max) @ Id, Vgs :
105m Ω @ 3.4A, 10V
Voltage - Rated DC :
-55V
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Factory Lead Time :
14 Weeks
Case Connection :
Isolated
Rise Time :
24ns
Number of Pins :
3
Drain to Source Voltage (Vdss) :
55V
Drain to Source Breakdown Voltage :
-55V
Additional Feature :
High Reliability
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Package / Case :
TO-220-3 Full Pack
Current Rating :
-14A
Turn On Delay Time :
9.5 ns
Transistor Element Material :
SILICON
Turn-Off Delay Time :
21 ns
Packaging :
Tube
Length :
10.6172mm
Height :
9.8mm
Width :
4.826mm
Dual Supply Voltage :
-55V
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Radiation Hardening :
No
Number of Terminations :
3
Continuous Drain Current (ID) :
-14A
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Datasheets
IRLIB9343PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRLIB9343PBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Number of Terminations:3, IRLIB9343PBF pinout, IRLIB9343PBF datasheet PDF, IRLIB9343PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRLIB9343PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRLIB9343PBF


P-Channel Tube 105m Ω @ 3.4A, 10V ±20V 660pF @ 50V 47nC @ 10V 55V TO-220-3 Full Pack

IRLIB9343PBF Description


This Digital Audio HEXFET? is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 °C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. 



IRLIB9343PBF Features


  • Advanced Process Technology

  • Key Parameters Optimized for Class-D Audio Amplifier Applications

  • Low RDSON for Improved Efficiency

  • Low QG and Qsw for Better THD and Improved Efficiency

  • Low Qrr for Better THD and Lower EMI

  • 175 °C Operating Junction Temperature for Ruggedness

  • Repetitive Avalanche Capability for Robustness and Reliability

  • Lead-Free



IRLIB9343PBF Applications


  • Switching Application

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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