IRLIB9343

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Operating Temperature :

-40°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

33W Tc

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Published :

2004

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

60A

Drain Current-Max (Abs) (ID) :

14A

Avalanche Energy Rating (Eas) :

190 mJ

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Number of Terminations :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

55V

FET Type :

P-Channel

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.105Ohm

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

55V

Additional Feature :

High Reliability

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V