IRLIB4343

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Mfr.Part #
IRLIB4343
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 55V 19A TO220AB FP
Stock
7,844
In Stock :
7,844

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Mounting Type :
Through Hole
RoHS Status :
Non-RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
19A Tc
Series :
HEXFET®
Package / Case :
TO-220-3 Full Pack
Published :
2004
Power Dissipation-Max :
39W Tc
Drain to Source Voltage (Vdss) :
55V
Rds On (Max) @ Id, Vgs :
50mOhm @ 4.7A, 10V
Supplier Device Package :
TO-220AB Full-Pak
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
1V @ 250μA
Operating Temperature :
-40°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Input Capacitance (Ciss) (Max) @ Vds :
740pF @ 50V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Datasheets
IRLIB4343
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRLIB4343 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Operating Temperature:-40°C~175°C TJ, IRLIB4343 pinout, IRLIB4343 datasheet PDF, IRLIB4343 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRLIB4343 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRLIB4343


N-Channel Tube 50mOhm @ 4.7A, 10V ±20V 740pF @ 50V 42nC @ 10V 55V TO-220-3 Full Pack

IRLIB4343 IGBT Description


The Class-D audio amplifier applications for this Digital Audio HEXFET8 are its only intended use. In order to achieve low on-resistance per silicon area, this MosFET makes use of the most recent fabrication techniques. Furthermore, to enhance crucial Class-D audio amplifier performance elements like efficacy, THD, and EMI, Gate charge, body-diode reverse recovery, and internal Gate resistance are tuned. The 175°C operational junction temperature and repeating avalanche capabilities of this MosFET are further features. This MOSFET is a highly effective, durable, and dependable component for Class-D audio amplifier applications due to the combination of these qualities.



IRLIB4343 IGBT Features


Low Qr for Better THD and Lower EMI

175°C Operating Junction Temperature for Ruggedness

Repetitive Avalanche Capability for Robustness and Reliability

Low Qg and Qsw for Better THD and Improved Efficiency

Low RDsoN for Improved Efficiency

Key Parameters Optimized for Class-D Audio Amplifier Applications

Advanced Process Technology



IRLIB4343 IGBT Applications


Class-D Audio Amplifiers

Hi-Fi Devices

Robots

Acoustic Weapon

Toys

Smart Home Appliances


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