IRLI640GPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

180mOhm

Supplier Device Package :

TO-220-3

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Drain to Source Resistance :

180mOhm

Fall Time (Typ) :

52 ns

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Power Dissipation-Max :

40W Tc

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Vgs(th) (Max) @ Id :

2V @ 250μA

Radiation Hardening :

No

Mounting Type :

Through Hole

Rise Time :

83ns

Number of Channels :

1

Input Capacitance :

1.8nF

Threshold Voltage :

2V

Power Dissipation :

40W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.63mm

Factory Lead Time :

8 Weeks

Drain to Source Voltage (Vdss) :

200V

Nominal Vgs :

2 V

Number of Elements :

1

Lead Free :

Lead Free

Weight :

6.000006g

Drain to Source Breakdown Voltage :

200V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Dual Supply Voltage :

200V

Rds On Max :

180 mΩ

Max Operating Temperature :

150°C

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Vgs (Max) :

±10V

Current - Continuous Drain (Id) @ 25°C :

9.9A Tc

Published :

2009

Turn-Off Delay Time :

44 ns

Number of Pins :

3

Width :

4.83mm

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

9.9A

Height :

9.8mm

Rds On (Max) @ Id, Vgs :

180mOhm @ 5.9A, 5V

Packaging :

Tube

Voltage :

200V

Turn On Delay Time :

8 ns