IRLI640G

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Mfr.Part #
IRLI640G
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 200V 9.9A TO220-3
Stock
37,600
In Stock :
37,600

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
9.9A Tc
Operating Temperature :
-55°C~150°C TJ
Width :
4.83mm
Turn-Off Delay Time :
44 ns
Power Dissipation-Max :
40W Tc
Published :
2017
RoHS Status :
Non-RoHS Compliant
Turn On Delay Time :
8 ns
Number of Channels :
1
Packaging :
Tube
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
150°C
Height :
9.8mm
Gate to Source Voltage (Vgs) :
10V
Radiation Hardening :
No
Fall Time (Typ) :
52 ns
Vgs (Max) :
±10V
Continuous Drain Current (ID) :
9.9A
Drain to Source Voltage (Vdss) :
200V
Input Capacitance :
1.8nF
Weight :
6.000006g
Supplier Device Package :
TO-220-3
Gate Charge (Qg) (Max) @ Vgs :
66nC @ 10V
Drain to Source Resistance :
180mOhm
Mounting Type :
Through Hole
Rds On Max :
180 mΩ
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
4V 5V
Rise Time :
83ns
Min Operating Temperature :
-55°C
Rds On (Max) @ Id, Vgs :
180mOhm @ 5.9A, 5V
Length :
10.63mm
Element Configuration :
Single
Vgs(th) (Max) @ Id :
2V @ 250μA
Datasheets
IRLI640G
Introducing Transistors - FETs, MOSFETs - Single Vishay IRLI640G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Isolated Tab, IRLI640G pinout, IRLI640G datasheet PDF, IRLI640G amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRLI640G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRLI640G


N-Channel Tube 180mOhm @ 5.9A, 5V ±10V 1800pF @ 25V 66nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab

IRLI640G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 25V.This device conducts a continuous drain current (ID) of 9.9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 180mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).

IRLI640G Features


a continuous drain current (ID) of 9.9A
the turn-off delay time is 44 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)


IRLI640G Applications


There are a lot of Vishay Siliconix
IRLI640G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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