IRLI640G
- Mfr.Part #
- IRLI640G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 9.9A TO220-3
- Stock
- 37,600
- In Stock :
- 37,600
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 9.9A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.83mm
- Turn-Off Delay Time :
- 44 ns
- Power Dissipation-Max :
- 40W Tc
- Published :
- 2017
- RoHS Status :
- Non-RoHS Compliant
- Turn On Delay Time :
- 8 ns
- Number of Channels :
- 1
- Packaging :
- Tube
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Height :
- 9.8mm
- Gate to Source Voltage (Vgs) :
- 10V
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 52 ns
- Vgs (Max) :
- ±10V
- Continuous Drain Current (ID) :
- 9.9A
- Drain to Source Voltage (Vdss) :
- 200V
- Input Capacitance :
- 1.8nF
- Weight :
- 6.000006g
- Supplier Device Package :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Drain to Source Resistance :
- 180mOhm
- Mounting Type :
- Through Hole
- Rds On Max :
- 180 mΩ
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Rise Time :
- 83ns
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 5.9A, 5V
- Length :
- 10.63mm
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Datasheets
- IRLI640G

N-Channel Tube 180mOhm @ 5.9A, 5V ±10V 1800pF @ 25V 66nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRLI640G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 25V.This device conducts a continuous drain current (ID) of 9.9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 180mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLI640G Features
a continuous drain current (ID) of 9.9A
the turn-off delay time is 44 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)
IRLI640G Applications
There are a lot of Vishay Siliconix
IRLI640G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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