IRLI630G
- Mfr.Part #
- IRLI630G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 6.2A TO220-3
- Stock
- 12,138
- In Stock :
- 12,138
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 35W Tc
- Power Dissipation :
- 32W
- Supplier Device Package :
- TO-220-3
- RoHS Status :
- Non-RoHS Compliant
- Turn-Off Delay Time :
- 38 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Min Operating Temperature :
- -55°C
- Rise Time :
- 57ns
- Published :
- 2016
- Width :
- 4.83mm
- Drain to Source Voltage (Vdss) :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Tc
- Length :
- 10.63mm
- Continuous Drain Current (ID) :
- 6.2A
- Lead Free :
- Contains Lead
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Drain to Source Resistance :
- 400mOhm
- Max Operating Temperature :
- 150°C
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 8 ns
- Vgs (Max) :
- ±10V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Weight :
- 6.000006g
- Current Rating :
- 6.2A
- Input Capacitance :
- 1.1nF
- Element Configuration :
- Single
- Number of Pins :
- 3
- Fall Time (Typ) :
- 33 ns
- Packaging :
- Tube
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Rds On Max :
- 400 mΩ
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Height :
- 9.8mm
- Drain to Source Breakdown Voltage :
- 200V
- Voltage - Rated DC :
- 200V
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 3.7A, 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Datasheets
- IRLI630G

N-Channel Tube 400mOhm @ 3.7A, 5V ±10V 1100pF @ 25V 40nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRLI630G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.This device has a drain-to-source resistance of 400mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.
IRLI630G Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 400mOhm
a 200V drain to source voltage (Vdss)
IRLI630G Applications
There are a lot of Vishay Siliconix
IRLI630G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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