IRLI620G
- Mfr.Part #
- IRLI620G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 4A TO220-3
- Stock
- 19,902
- In Stock :
- 19,902
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 31ns
- Drain to Source Breakdown Voltage :
- 200V
- Voltage - Rated DC :
- 200V
- Supplier Device Package :
- TO-220-3
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 800 mΩ
- Power Dissipation :
- 30W
- Element Configuration :
- Single
- Lead Free :
- Contains Lead
- Continuous Drain Current (ID) :
- 4A
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 2.4A, 5V
- Gate to Source Voltage (Vgs) :
- 10V
- Power Dissipation-Max :
- 30W Tc
- Turn On Delay Time :
- 4.2 ns
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Turn-Off Delay Time :
- 18 ns
- Input Capacitance :
- 360pF
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Fall Time (Typ) :
- 17 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Number of Pins :
- 3
- Published :
- 2017
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Drain to Source Resistance :
- 800mOhm
- Radiation Hardening :
- No
- Vgs (Max) :
- ±10V
- Current Rating :
- 4.1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Packaging :
- Tube
- Datasheets
- IRLI620G

N-Channel Tube 800mOhm @ 2.4A, 5V ±10V 360pF @ 25V 16nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRLI620G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 360pF @ 25V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.MOSFETs have 800mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 4.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 5V).
IRLI620G Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)
IRLI620G Applications
There are a lot of Vishay Siliconix
IRLI620G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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