IRLI610ATU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.65A, 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

200V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

Terminal Finish :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Pulsed Drain Current-Max (IDM) :

12A

Packaging :

Tube

Transistor Element Material :

SILICON

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

3.3A

Avalanche Energy Rating (Eas) :

29 mJ

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Power Dissipation-Max :

3.1W Ta 33W Tc

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Qualification Status :

COMMERCIAL