IRLI540NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Fall Time (Typ) :

62 ns

Rise Time :

81ns

Series :

HEXFET®

Threshold Voltage :

2V

Continuous Drain Current (ID) :

23A

Dual Supply Voltage :

100V

Element Configuration :

Single

Resistance :

53mOhm

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

100V

Mount :

Through Hole

Mounting Type :

Through Hole

Power Dissipation :

42W

Turn-Off Delay Time :

39 ns

Number of Pins :

3

Height :

9.8mm

Current Rating :

20A

Recovery Time :

290 ns

Rds On (Max) @ Id, Vgs :

44m Ω @ 12A, 10V

Gate to Source Voltage (Vgs) :

16V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Power Dissipation-Max :

54W Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Lead Free :

Lead Free

Published :

1998

Isolation Voltage :

2kV

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Length :

10.6mm

Nominal Vgs :

2 V

RoHS Status :

ROHS3 Compliant

Width :

4.8mm

Vgs (Max) :

±16V

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 5V

Turn On Delay Time :

11 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube