IRLI540NPBF
- Mfr.Part #
- IRLI540NPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 23A TO220AB
- Stock
- 1,093
- In Stock :
- 1,093
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 16V
- Series :
- HEXFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 5V
- Isolation Voltage :
- 2kV
- Threshold Voltage :
- 2V
- Case Connection :
- Isolated
- Dual Supply Voltage :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Power Dissipation-Max :
- 54W Tc
- Rise Time :
- 81ns
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 39 ns
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Recovery Time :
- 290 ns
- Published :
- 1998
- Nominal Vgs :
- 2 V
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 9.8mm
- Voltage - Rated DC :
- 100V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Resistance :
- 53mOhm
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±16V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Current Rating :
- 20A
- Number of Elements :
- 1
- Width :
- 4.8mm
- Fall Time (Typ) :
- 62 ns
- Rds On (Max) @ Id, Vgs :
- 44m Ω @ 12A, 10V
- Turn On Delay Time :
- 11 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 100V
- Packaging :
- Tube
- Length :
- 10.6mm
- Power Dissipation :
- 42W
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3 Full Pack
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 23A
- Datasheets
- IRLI540NPBF

N-Channel Tube 44m Ω @ 12A, 10V ±16V 1800pF @ 25V 74nC @ 5V TO-220-3 Full Pack
IRLI540NPBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to achieve exceptionally low onresistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for.
In commercial and industrial applications, the TO-220 Full Pak eliminates the need for additional insulating gear. The molding material utilized offers a strong thermal isolation between the tab and external heat sink and a low thermal resistance. This isolation is comparable to employing a mica barrier with a conventional TO-220 product that is 100 microns thick. A single clip or single screw can be used to fix the Fullpak to a heat sink.
IRLI540NPBF Features
-
Logic ¨CLevel Gate Drive
-
Advanced Process Technology
-
Isolated Package
-
High Voltage Isolation = 2.5KVRMS ?
-
Sink to Lead Creepage Dist. = 4.8mm
-
Fully Avalanche Rated
-
Lead-Free
IRLI540NPBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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