IRLI540N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

310 mJ

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tube

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Drain-source On Resistance-Max :

0.053Ohm

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Surface Mount :

No

Mounting Type :

Through Hole

Published :

1998

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

44m Ω @ 12A, 10V

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

54W Tc

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 5V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

120A

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

23A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Case Connection :

Isolated

Operating Temperature :

-55°C~175°C TJ