IRLI530NPBF
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- Mfr.Part #
- IRLI530NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 12A TO220AB FP
- Stock
- 9,928
- In Stock ：
- 9,928
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 41W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 9A, 10V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 60A
- Published :
- 2004
- Lead Free :
- Contains Lead, Lead Free
- Vgs (Max) :
- ±16V
- Dual Supply Voltage :
- 100V
- Element Configuration :
- Single
- Threshold Voltage :
- 2V
- RoHS Status :
- ROHS3 Compliant
- Recovery Time :
- 210 ns
- Series :
- HEXFET®
- Current Rating :
- 11A
- Resistance :
- 120mOhm
- ECCN Code :
- EAR99
- Nominal Vgs :
- 2 V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Turn On Delay Time :
- 7.2 ns
- Length :
- 10.6172mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Gate to Source Voltage (Vgs) :
- 16V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 5V
- FET Type :
- N-Channel
- Width :
- 4.826mm
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Number of Elements :
- 1
- Factory Lead Time :
- 14 Weeks
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- REACH SVHC :
- No SVHC
- Rise Time :
- 53ns
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Fall Time (Typ) :
- 26 ns
- Continuous Drain Current (ID) :
- 12A
- Number of Pins :
- 3
- Voltage - Rated DC :
- 100V
- Package / Case :
- TO-220-3 Full Pack
- Isolation Voltage :
- 2kV
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 16.12mm
- Turn-Off Delay Time :
- 30 ns
- Power Dissipation :
- 33W
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 100V
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- IRLI530NPBF
N-Channel Tube 100m Ω @ 9A, 10V ±16V 800pF @ 25V 34nC @ 5V TO-220-3 Full Pack
IRLI530NPBF Overview
A device's maximal input capacitance is 800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 60A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This device reduces its overall power consumption by using drive voltage (4V 10V).
IRLI530NPBF Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 60A.
a threshold voltage of 2V
IRLI530NPBF Applications
There are a lot of Infineon Technologies
IRLI530NPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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