IRL7833STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Length :

10.668mm

Vgs (Max) :

±20V

Radiation Hardening :

No

Element Configuration :

Single

Height :

4.826mm

Drain to Source Resistance :

3.8mOhm

Rise Time :

50ns

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

2.3 V

Lead Free :

Lead Free

Fall Time (Typ) :

6.9 ns

Turn On Delay Time :

18 ns

Mounting Type :

Surface Mount

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Turn-Off Delay Time :

21 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

140W Tc

Supplier Device Package :

D2PAK

Input Capacitance :

4.17nF

Continuous Drain Current (ID) :

150A

Operating Temperature :

-55°C~175°C TJ

Max Operating Temperature :

175°C

Rds On (Max) @ Id, Vgs :

3.8mOhm @ 38A, 10V

Published :

2004

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

3.8 mΩ

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

4170pF @ 15V

Power Dissipation :

140W

Resistance :

3.8mOhm

Series :

HEXFET®

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Width :

9.65mm